On Surface 1/f Noise in MOSFETs

Zhuang Yi-qi; Sun Qing

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On Surface 1/f Noise in MOSFETs

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- On Surface 1/f Noise in MOSFETs
- Acta Electronica Sinica Issue 2, Pages: 56-60(1988)
- 作者机构：
  
  西北电讯工程学院
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1988
- 稿件说明：
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[1]庄奕琪,孙青.MOSFET表面1/f噪声的研究[J].电子学报,1988(02):56-60.

Zhuang Yi-qi, Sun Qing. On Surface 1/f Noise in MOSFETs[J]. Acta Electronica Sinica, 1988, (2): 56-60.
[1]庄奕琪,孙青.MOSFET表面1/f噪声的研究[J].电子学报,1988(02):56-60. DOI：

Zhuang Yi-qi, Sun Qing. On Surface 1/f Noise in MOSFETs[J]. Acta Electronica Sinica, 1988, (2): 56-60. DOI：

摘要

本文从表面载流子数涨落机构出发

对MOSFET的1/f噪声性质作了较全面的理论和实验研究。将MOSFET的表面1/f噪声理论推广到了所有的偏置区

包括沟道均匀区

线性区和饱和区。对MOSFET的等效输入噪声电压的频率特性、偏置特性和几何特性等进行了实验测试

结果表明与理论规律符合良好。

Abstract

Based on the surface carrier number fluctuation mechanism

the 1/f noise in MOSFETs is studied in theory and experiments. The surface 1/f noise theory of MOSFETs is extended to the whole range of bias: the channel homogeneous

linear

and saturation regions. The equivalent input noise voltage of MOSFETs as a function of frequency

bias

geometry etc. is measured. Experimental results agree well with theory prediction.

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