The Influence of Recoil Oxygen on As<sup>+</sup> Enhanced Diffusion during Rapid Thermal Annealing

Zhang Tong-he; Wu Yu-guang; Luo Yan

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The Influence of Recoil Oxygen on As⁺ Enhanced Diffusion during Rapid Thermal Annealing

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- The Influence of Recoil Oxygen on As⁺ Enhanced Diffusion during Rapid Thermal Annealing
- Acta Electronica Sinica Issue 4, Pages: 105-107(1987)
- 作者机构：
  
  北京师范大学低能核物理研究所
- 作者简介：
- 基金信息：
- DOI：
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- Published：1987
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[1]张通和,吴瑜光,罗晏.瞬态退火中反冲氧对As增强扩散的影响[J].电子学报,1987(04):105-107.

Zhang Tong-he, Wu Yu-guang, Luo Yan. The Influence of Recoil Oxygen on As⁺ Enhanced Diffusion during Rapid Thermal Annealing[J]. Acta Electronica Sinica, 1987, (4): 105-107.
[1]张通和,吴瑜光,罗晏.瞬态退火中反冲氧对As增强扩散的影响[J].电子学报,1987(04):105-107. DOI：

Zhang Tong-he, Wu Yu-guang, Luo Yan. The Influence of Recoil Oxygen on As⁺ Enhanced Diffusion during Rapid Thermal Annealing[J]. Acta Electronica Sinica, 1987, (4): 105-107. DOI：

摘要

本文研究了当As

通过SiO

注入Si时

反冲注入高密度的氧在退火期间所引起的位锚网

以及位错网对As增强扩散的影响。给出了As增强扩散的分析模型

得到了用氧化层掩蔽作用获取浅的p-n结的条件

并给出了制备1000埃高浓度浅结的结果。

Abstract

High-density residual defects induced by rapid thermal annealing during As+ implantation into Si through SiO2 and the influences of defects on As* enhanced diffusion are studied.The diffusion model is given

the conditions of preparing shallow p-n junction are obtained

and the 1000A p-n junction with high carrier concentration is made.

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The Influence of Recoil Oxygen on As+ Enhanced Diffusion during Rapid Thermal Annealing

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The Influence of Recoil Oxygen on As⁺ Enhanced Diffusion during Rapid Thermal Annealing