The Application of Hydrogenated Amorphous Si Passivation Film to the Si Devices

Du Jia-fang; He Yu-liang; Yi Feng

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The Application of Hydrogenated Amorphous Si Passivation Film to the Si Devices

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- The Application of Hydrogenated Amorphous Si Passivation Film to the Si Devices
- Acta Electronica Sinica Issue 2, Pages: 105-107(1987)
- 作者机构：
  
  1.   南京大学
  2.   南京固体器件研究所
  3.   上无29厂
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987
- 稿件说明：
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[1]杜家方,何宇亮,叶峰,熊承堃,张晓明,李寿林,朱菊珍.无定型硅基钝化膜在硅器件中的应用[J].电子学报,1987(02):105-107.

Du Jia-fang, He Yu-liang, Yi Feng. The Application of Hydrogenated Amorphous Si Passivation Film to the Si Devices[J]. Acta Electronica Sinica, 1987, (2): 105-107.
[1]杜家方,何宇亮,叶峰,熊承堃,张晓明,李寿林,朱菊珍.无定型硅基钝化膜在硅器件中的应用[J].电子学报,1987(02):105-107. DOI：

Du Jia-fang, He Yu-liang, Yi Feng. The Application of Hydrogenated Amorphous Si Passivation Film to the Si Devices[J]. Acta Electronica Sinica, 1987, (2): 105-107. DOI：

摘要

本文报道了无定型硅基钝化膜在功率晶体管中的应用情况。实验结果表明:采用此钝化膜有助于改善平面p-n结的电气性能和表面抗污染能力

提高了器件的可靠性和稳定性。对此钝化机理本文也作了相应的讨论。

Abstract

The application of hydrogenated amorphous silicon （a-Si: H） passivation film to the power transistors is reported in this paper. Experimental results show that the passivation film has contributions tolhe improvement of the electrical properties and to the prevention of the p-n junction contamination

hence to the improvement of the reliability and stability of devices. The passivation mechanism is also discussed.

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