High Rerformance 8mm Frequency Band Integrated Front-End

Li Duen-fu; Wu Duan.Shen Hai-gen; Guan Shu-zhu

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High Rerformance 8mm Frequency Band Integrated Front-End

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- High Rerformance 8mm Frequency Band Integrated Front-End
- Acta Electronica Sinica Issue 1, Pages: 47-51(1987)
- 作者机构：
  
  中国科学技术大学
- 作者简介：
- 基金信息：
- DOI：
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- Published：1987
- 稿件说明：
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[1]李敦复,吴端,沈海根,关树柱.高性能八毫米波集成前端[J].电子学报,1987(01):47-51.

Li Duen-fu, Wu Duan.Shen Hai-gen, Guan Shu-zhu. High Rerformance 8mm Frequency Band Integrated Front-End[J]. Acta Electronica Sinica, 1987, (1): 47-51.
[1]李敦复,吴端,沈海根,关树柱.高性能八毫米波集成前端[J].电子学报,1987(01):47-51. DOI：

Li Duen-fu, Wu Duan.Shen Hai-gen, Guan Shu-zhu. High Rerformance 8mm Frequency Band Integrated Front-End[J]. Acta Electronica Sinica, 1987, (1): 47-51. DOI：

摘要

本文讨论了在毫米波集成混频器中采用大结面积封装二极管的问题。提出并分析了一种高Q腔稳定的集成毫米波Gunn氏振荡器。在此基础上完全用国产器材研制了一个8mm集成接收前端

其双边带噪声最小可达到3.6dB。谱线宽度可低达500Hz

体积约一个火柴盒大

抗冲击性能极高。此组件已小批量生产和应用。

Abstract

The problems of using packaged diodes with large junction area for milimeter wave integrated mixers are discussed. A cavity stabilized integrated Gunn oscillator is given and analyzed. A high performance 8mm wave integrated front-end has been developed with minimum double side band noise figure of 3.6 dB

frequency temperature coefficient of 3×10-6 /℃

spectra line width of 500 Hz and very high shock-resistivity. Such unit has been produced by small amounts and working well in many systems.

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