Laser Recrystallization of MOCVD Poly-GaAs on Insulating Substrates

Bao Xi-mao; Han Ping; Yin Jing-mei

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Laser Recrystallization of MOCVD Poly-GaAs on Insulating Substrates

更新时间：2025-12-08

- Laser Recrystallization of MOCVD Poly-GaAs on Insulating Substrates
- Acta Electronica Sinica Issue 3, Pages: 110-113(1986)
- 作者机构：
  
  南京大学物理系
- 作者简介：
- 基金信息：
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- Published：1986
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[1]鲍希茂,韩平,尹金妹.绝缘衬底上MOCVD多晶GaAs激光再结晶[J].电子学报,1986(03):110-113.

Bao Xi-mao, Han Ping, Yin Jing-mei. Laser Recrystallization of MOCVD Poly-GaAs on Insulating Substrates[J]. Acta Electronica Sinica, 1986, (3): 110-113.
[1]鲍希茂,韩平,尹金妹.绝缘衬底上MOCVD多晶GaAs激光再结晶[J].电子学报,1986(03):110-113. DOI：

Bao Xi-mao, Han Ping, Yin Jing-mei. Laser Recrystallization of MOCVD Poly-GaAs on Insulating Substrates[J]. Acta Electronica Sinica, 1986, (3): 110-113. DOI：

摘要

用MOCVD法在绝缘衬底上生长了多晶GaAs膜。这种膜表面平坦光亮

结构细密

晶粒均匀

具有GaAs化学计量。用连续氩离子激光扫描

多晶GaAs将发生再结晶

晶粒可从200（?）增至40μm

再结晶后仍保持原来的化学计量。在再结晶层上制出了肖特基势垒二极管。

Abstract

Polycrystalline GaAs films are grown successfully on insulating substrates by MOCVD technique. The film is flat and bright

close in texture

and has stoichiometry of GaAs. The poly-GaAs films were recrystallized with grain size changed from 200A’ to 40 μm when scanned by CW Ar+ laser beam. The schottky barrier diodes are fabricated on the leaser recrystallized GaAs film.

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