Lifetime Calculation of Backside-Illuminated EBS-CCD

Chen Zhong-mou; Zhan Ji-deng

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Lifetime Calculation of Backside-Illuminated EBS-CCD

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- Lifetime Calculation of Backside-Illuminated EBS-CCD
- Acta Electronica Sinica Issue 4, Pages: 108-110(1987)
- 作者机构：
  
  南京电子器件研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987
- 稿件说明：
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[1]陈钟谋,张吉登.EBS-CCD背照器件的寿命计算[J].电子学报,1987(04):108-110.

Chen Zhong-mou, Zhan Ji-deng. Lifetime Calculation of Backside-Illuminated EBS-CCD[J]. Acta Electronica Sinica, 1987, (4): 108-110.
[1]陈钟谋,张吉登.EBS-CCD背照器件的寿命计算[J].电子学报,1987(04):108-110. DOI：

Chen Zhong-mou, Zhan Ji-deng. Lifetime Calculation of Backside-Illuminated EBS-CCD[J]. Acta Electronica Sinica, 1987, (4): 108-110. DOI：

摘要

本文根据背照器件SiO

层吸收的x射线总剂量所造成的电子损伤

计算了背照器件的寿命。计算值和实验值十分一致。背照器件的有效寿命可达几千小时以上

这在作者的加速寿命试验中得到进一步证实。

Abstract

On the basis of the electron degradation

caused by the total x-ray dose absorbed by the SiO2 layer of backside-illminated device

the lifetime of EBS-CCD is calculated.The theoretical results are in good comformity with experiments.The effective lifetime for backside-illminated EBS-CCD is more than several kilohours

which may be confirmed in our accelerated lifetime experiments.

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