Remake Si PNP Transistor by Electron Irradiation

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Remake Si PNP Transistor by Electron Irradiation

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- Remake Si PNP Transistor by Electron Irradiation
- Acta Electronica Sinica Issue 2, Pages: 125-127(1988)
- 作者机构：
  
  1. 北京大学
  2. 北京半导体器件五厂
  3. 北京大学北京半导体器件五厂
- 作者简介：
- 基金信息：
- DOI：
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- Published：1988
- 稿件说明：
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[1]王忠安,郭世民.利用电子辐照效应改造硅外延PNP晶体管[J].电子学报,1988(02):125-127.

Wang. Remake Si PNP Transistor by Electron Irradiation[J]. Acta Electronica Sinica, 1988, (2): 125-127.
[1]王忠安,郭世民.利用电子辐照效应改造硅外延PNP晶体管[J].电子学报,1988(02):125-127. DOI：

Wang. Remake Si PNP Transistor by Electron Irradiation[J]. Acta Electronica Sinica, 1988, (2): 125-127. DOI：

摘要

本文介绍了利用5MeV电子辐照把硅外延晶体管改造成开关晶体管的一种新方法

实用证明该方法是成功的

可取代传统的掺金工艺。文中报道了用深能级瞬态谱（DLTS）等方法研究电子辐照引入缺陷的性质

证明这些缺陷具有很好的热稳定性;测到了H（0.41）能级。

Abstract

A new method (or transforming an epitaxial silicon PNP transistor into a switching one by SMeV electron irradiation is introduced. The method has been successful in use and is able to take the place of the general process of golddoping. The properties of the defects produced by electron irradiation in the transistor are studied by means of DLTS. It is shown that these defects are of good thermostabi-lity

and the H （0.41） level is detected.

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