E/D NMOS Voltage Reference

您当前的位置：

首页 >

文章列表页 >

更新时间：2025-12-08

- E/D NMOS Voltage Reference
- Acta Electronica Sinica Issue 2, Pages: 76-82(1987)
- 作者机构：
  
  清华大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1987
- 稿件说明：
移动端阅览
[1]龚明甫,郑君里,李永明.E/D NMOS基准电压源[J].电子学报,1987(02):76-82.

Gong Ming-fu, Zheng Jun-li, and Li Yong-ming. E/D NMOS Voltage Reference[J]. Acta Electronica Sinica, 1987, (2): 76-82.
[1]龚明甫,郑君里,李永明.E/D NMOS基准电压源[J].电子学报,1987(02):76-82. DOI：

Gong Ming-fu, Zheng Jun-li, and Li Yong-ming. E/D NMOS Voltage Reference[J]. Acta Electronica Sinica, 1987, (2): 76-82. DOI：

本文讨论E/D NMOS高稳定度基准电压源的设计方法。在R.A.Blauschild理论的基础上

导出了新的结果和表达式

提出一种温度系数可片上微调的基准电压源电路。电路设计利用SPICE-Ⅱ程序进行了计算机模拟

样片测试取得了满意的结果。

This paper discusses the design method of E/D NMOS high stability voltage reference. Based on R. A. Blauschild’s theory

some new results and formulas are obtained

and a new NMOS voltage reference with temperature coefficient trimmable-on-chip is achieved.The circuit design is simulated with SPICE-Ⅱ

and the experiment of the test chip shows a satisfactory result.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰