Error Analysis for Precision Measurement of Silicon Wafer Resistivity by Four-Probe Method

Ynan Yin; Li Da-ban

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Error Analysis for Precision Measurement of Silicon Wafer Resistivity by Four-Probe Method

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- Error Analysis for Precision Measurement of Silicon Wafer Resistivity by Four-Probe Method
- Acta Electronica Sinica Issue 1, Pages: 117-119(1988)
- 作者机构：
  
  中国计量科学研究院
- 作者简介：
- 基金信息：
- DOI：
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- Published：1988
- 稿件说明：
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[1]袁隐,李达汉.硅片四探针电阻率精密测量误差分析[J].电子学报,1988(01):117-119.

Ynan Yin, Li Da-ban. Error Analysis for Precision Measurement of Silicon Wafer Resistivity by Four-Probe Method[J]. Acta Electronica Sinica, 1988, (1): 117-119.
[1]袁隐,李达汉.硅片四探针电阻率精密测量误差分析[J].电子学报,1988(01):117-119. DOI：

Ynan Yin, Li Da-ban. Error Analysis for Precision Measurement of Silicon Wafer Resistivity by Four-Probe Method[J]. Acta Electronica Sinica, 1988, (1): 117-119. DOI：

摘要

本文详细介绍了厚度为0.5～1.0mm的硅片进行电阻率精密测量的误差分析

讨论了电阻率精密测量时不确定度的计算方法。

Abstract

The error analysis for precision meaturement of resistivity of silicon wafer with thickness between 0.5 and 1.0mm is described. The calculating method for the uncertainty of precision measurement of the resistivity is presented.

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