DLTS Study of the Oxygen I-G Effect on Si Wafer

Ye Liang; Zhang Hong-rui; Mao Er-wang; Ye Qiu-yi; Fang Guo-ping

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DLTS Study of the Oxygen I-G Effect on Si Wafer

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- DLTS Study of the Oxygen I-G Effect on Si Wafer
- Acta Electronica Sinica Issue 3, Pages: 122-123(1987)
- 作者机构：
  
  中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
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- Published：1987
- 稿件说明：
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[1]叶亮,章宏叡,毛尔望,叶秋怡,房国平.氧本征吸除硅晶片的DLTS研究[J].电子学报,1987(03):122-123.

Ye Liang, Zhang Hong-rui, Mao Er-wang, et al. DLTS Study of the Oxygen I-G Effect on Si Wafer[J]. Acta Electronica Sinica, 1987, (3): 122-123.
[1]叶亮,章宏叡,毛尔望,叶秋怡,房国平.氧本征吸除硅晶片的DLTS研究[J].电子学报,1987(03):122-123. DOI：

Ye Liang, Zhang Hong-rui, Mao Er-wang, et al. DLTS Study of the Oxygen I-G Effect on Si Wafer[J]. Acta Electronica Sinica, 1987, (3): 122-123. DOI：

摘要

本文通过DLTS深能普和I-V反向特性的测试

研究了经氧本征吸除处理的晶片（I-G晶片）和一般抛光片（原始晶片）在电学性能上的差别。研究结果表明

I-G工艺的本质是一个温度变化的热处理过程

在产生吸杂作用的同时对晶格结构也产生热损伤影响

并引入深能级陷阱中心。

Abstract

The difference between oxygen intrinsic gettering wafer and commonly polished wafer is investigated using the measurements of DLTS and I-V. After the I-G treatment

I-G wafers have excellent properties in negative bias

but a deep level trap centers of Ec-0.49（eV） has been found. The results show that I-G technique has good function in gettering

but it damages crystal structure and the deep level trap centers.

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