Improvement of Secondary Electron Emission Characteristics by Ion Implantation

Liu Xiang-huai; Tsou Shi-chang

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Improvement of Secondary Electron Emission Characteristics by Ion Implantation

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- Improvement of Secondary Electron Emission Characteristics by Ion Implantation
- Acta Electronica Sinica Issue 1, Pages: 117-118(1987)
- 作者机构：
  
  1. 中科院上海冶金研究所
  2. 中科院电子学研究所
  3. 中科院上海冶金研究所中科院电子学研究所
- 作者简介：
- 基金信息：
- DOI：
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- Published：1987
- 稿件说明：
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[1]柳襄怀,邹世昌,屠聿善.离子注入改善二次电子发射特性研究[J].电子学报,1987(01):117-118.

Liu Xiang-huai, Tsou Shi-chang. Improvement of Secondary Electron Emission Characteristics by Ion Implantation[J]. Acta Electronica Sinica, 1987, (1): 117-118.
[1]柳襄怀,邹世昌,屠聿善.离子注入改善二次电子发射特性研究[J].电子学报,1987(01):117-118. DOI：

Liu Xiang-huai, Tsou Shi-chang. Improvement of Secondary Electron Emission Characteristics by Ion Implantation[J]. Acta Electronica Sinica, 1987, (1): 117-118. DOI：

摘要

本文用铬离子注入改善了摄像管用铜网的抗氧化性能和二次电子发射特性

与栅网的蒸发石墨碳化工艺比较

有其优越性和实际意义。

Abstract

The oxidation resistance and the secondary electron emission characteristics of copper grid in front of the target of a T. V. Camera have been improved by Cr+ implantation. Compared to copper grids evaporated with carbon

ion implantation is a prospective method for improving these characteristics.

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