A Study of Surface Photovoltaic Spectra of Epitaxial Materials of the Ⅲ-ⅤCompounds

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- A Study of Surface Photovoltaic Spectra of Epitaxial Materials of the Ⅲ-ⅤCompounds
- Acta Electronica Sinica Issue 2, Pages: 85-91(1986)
- 作者机构：
  
  厦门大学物理系福建
- 作者简介：
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- DOI：
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- Published：1986
- 稿件说明：
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[1]沈(岂页)华.Ⅲ-Ⅴ族化合物外延材料的表面光伏谱的研究[J].电子学报,1986(02):85-91.

Shen Qi-hua. A Study of Surface Photovoltaic Spectra of Epitaxial Materials of the Ⅲ-ⅤCompounds[J]. Acta Electronica Sinica, 1986, (2): 85-91.
[1]沈(岂页)华.Ⅲ-Ⅴ族化合物外延材料的表面光伏谱的研究[J].电子学报,1986(02):85-91. DOI：

Shen Qi-hua. A Study of Surface Photovoltaic Spectra of Epitaxial Materials of the Ⅲ-ⅤCompounds[J]. Acta Electronica Sinica, 1986, (2): 85-91. DOI：

测量了不同掺杂浓度和外延层厚度的Ⅲ-Ⅴ族化合物外延材料的光伏谱。由曲线拟合计算出了外延层的掺杂浓度和少子扩散长度等参数

并与实验测量值作了对比

结果表明

理论与实际基本一致。

The surface photovoltaic spectra of epitaxial materials of the Ⅲ-Ⅴ compounds

with different doped levels and different thickness in the epitaxial region

are measured. The parameters

doped levels and minority carrier diffusion length in the epitaxial region etc

are calculated by curve fitting method with a microcomputer. The calculated results basically agree with experiments.

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