The Influence of Substrate Temperature on the Si Deposition Films during the Process of PCVD

Wang Zhi-chao; Wu Gang; Sun Mei-xiang; Chen Run-hua

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The Influence of Substrate Temperature on the Si Deposition Films during the Process of PCVD

更新时间：2025-12-08

- The Influence of Substrate Temperature on the Si Deposition Films during the Process of PCVD
- Acta Electronica Sinica Issue 5, Pages: 111-113(1986)
- 作者机构：
  
  南京大学物理系
- 作者简介：
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- Published：1986
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[1]王志超,吴刚,孙美祥,陈润华.在PCVD过程中衬度温度对Si沉积膜的影响[J].电子学报,1986(05):111-113.

Wang Zhi-chao, Wu Gang, Sun Mei-xiang, et al. The Influence of Substrate Temperature on the Si Deposition Films during the Process of PCVD[J]. Acta Electronica Sinica, 1986, (5): 111-113.
[1]王志超,吴刚,孙美祥,陈润华.在PCVD过程中衬度温度对Si沉积膜的影响[J].电子学报,1986(05):111-113. DOI：

Wang Zhi-chao, Wu Gang, Sun Mei-xiang, et al. The Influence of Substrate Temperature on the Si Deposition Films during the Process of PCVD[J]. Acta Electronica Sinica, 1986, (5): 111-113. DOI：

摘要

本文研究了PCVD过程中

不同衬底温度对Si沉积膜中凝聚颗粒大小、结晶状态以及生长速率的影响。并对其实验结果进行了相应的讨论。

Abstract

The influence of different substrate temperatures on the size of condensed particles

condi tion of crystallization and growth rate in the Si deposition films during the PCVD processes is studied and the experimental results are discussed correspondingly.

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