Thermoelectric Power Measurement of Amorphous Ⅲ-Ⅴ Compounds Semiconductors

Liu Xiang-huai

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Thermoelectric Power Measurement of Amorphous Ⅲ-Ⅴ Compounds Semiconductors

更新时间：2025-12-08

- Thermoelectric Power Measurement of Amorphous Ⅲ-Ⅴ Compounds Semiconductors
- Acta Electronica Sinica Issue 3, Pages: 114-116(1986)
- 作者机构：
  
  中国科学院上海冶金研究所
- 作者简介：
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- Published：1986
- 稿件说明：
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[1]柳襄怀.非晶态Ⅲ-Ⅴ族化合物半导体的热电势测量[J].电子学报,1986(03):114-116.

Liu Xiang-huai. Thermoelectric Power Measurement of Amorphous Ⅲ-Ⅴ Compounds Semiconductors[J]. Acta Electronica Sinica, 1986, (3): 114-116.
[1]柳襄怀.非晶态Ⅲ-Ⅴ族化合物半导体的热电势测量[J].电子学报,1986(03):114-116. DOI：

Liu Xiang-huai. Thermoelectric Power Measurement of Amorphous Ⅲ-Ⅴ Compounds Semiconductors[J]. Acta Electronica Sinica, 1986, (3): 114-116. DOI：

摘要

本文用热电势和直流电导变温测量相结合的方法

研究了离子束轰击单晶GaAs、GaP和Inp得到的薄层非晶态化合物半导体材料的电学行为。结果表明

离子轰击非晶化是研究和了解非晶化合物半导体基本特性的一种良好手段。

Abstract

Using measurements of the thermopower and DC conductivities

the electrical properties of thin films of GaAs

GaP and InP which rendered amorphous by bombardment with rare gas ions arc investigated. It is shown that ion beam bombardment amorphization is an advantageous technique for studying and understanding the fundamental process in the amorphous compounds Semiconductors.

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