On the Saturation Voltage of High-Voltage Power Transistors

Sung Nan-sing

您当前的位置：

首页 >

文章列表页 >

On the Saturation Voltage of High-Voltage Power Transistors

更新时间：2025-12-08

- On the Saturation Voltage of High-Voltage Power Transistors
- Acta Electronica Sinica Issue 5, Pages: 78-82(1985)
- 作者机构：
  
  浙江大学
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1985
- 稿件说明：
移动端阅览
[1]宋南辛.关于高压功率晶体管的饱和压降[J].电子学报,1985(05):78-82.

Sung Nan-sing. On the Saturation Voltage of High-Voltage Power Transistors[J]. Acta Electronica Sinica, 1985, (5): 78-82.
[1]宋南辛.关于高压功率晶体管的饱和压降[J].电子学报,1985(05):78-82. DOI：

Sung Nan-sing. On the Saturation Voltage of High-Voltage Power Transistors[J]. Acta Electronica Sinica, 1985, (5): 78-82. DOI：

摘要

本文讨论了具有轻掺杂集电区的高压功率晶体管的静态饱和特性

导出了一个考虑到集电结大注入效应的饱和压降的分析表达式。

Abstract

The static saturation characteristics of high-voltage power transistors with lightly doped collector region is discussed.An analytical expression of saturation voltage is derived

in which the high level injection effect of collector junction is considered.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰