Micro Statistical Model of 1/f Noise in Semiconductor Dvices

Shi Young-ji

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Micro Statistical Model of 1/f Noise in Semiconductor Dvices

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- Micro Statistical Model of 1/f Noise in Semiconductor Dvices
- Acta Electronica Sinica Issue 2, Pages: 68-73(1985)
- 作者机构：
  
  洛阳建筑材料工业专科学校
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- Published：1985
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[1]史永基.半导体器件中l/f噪声的微观统计模型[J].电子学报,1985(02):68-73.

Shi Young-ji. Micro Statistical Model of 1/f Noise in Semiconductor Dvices[J]. Acta Electronica Sinica, 1985, (2): 68-73.
[1]史永基.半导体器件中l/f噪声的微观统计模型[J].电子学报,1985(02):68-73. DOI：

Shi Young-ji. Micro Statistical Model of 1/f Noise in Semiconductor Dvices[J]. Acta Electronica Sinica, 1985, (2): 68-73. DOI：

摘要

半导体器件中1/f噪声的粒子数涨落和迁移率涨落模型具有很大的局限性。本文利用Boltzmann输运理论提出了一个描述其1/f噪声的微观统计模型

得到了与实验更为相符的关于1/f噪声谱密度的公式。

Abstract

In semiconductor devices the number fluctuation and the mobility fluctuation models of 1/f noise have many limitations. A micro statistical model of 1/f noise by Boltz-mann transfort theory is proposed. A general formula of 1/f noise spectrum density is deduced. This formula agrees with experimental results.

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