Study on LPE-GaAs lor x-band Gunn Device

Ding Mo-yuan; Shi Yi-he; Wang Yan; Li Shuang-xi; Fu Tao

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Study on LPE-GaAs lor x-band Gunn Device

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- Study on LPE-GaAs lor x-band Gunn Device
- Acta Electronica Sinica Issue 4, Pages: 108-110(1984)
- 作者机构：
  
  冶金部有色金属研究总院
- 作者简介：
- 基金信息：
- DOI：
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- Published：1984
- 稿件说明：
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[1]丁墨元,施益和,王岩,李双喜,傅涛.X波段Gunn器件用的LPE-GaAs材料[J].电子学报,1984(04):108-110.

Ding Mo-yuan, Shi Yi-he, Wang Yan, et al. Study on LPE-GaAs lor x-band Gunn Device[J]. Acta Electronica Sinica, 1984, (4): 108-110.
[1]丁墨元,施益和,王岩,李双喜,傅涛.X波段Gunn器件用的LPE-GaAs材料[J].电子学报,1984(04):108-110. DOI：

Ding Mo-yuan, Shi Yi-he, Wang Yan, et al. Study on LPE-GaAs lor x-band Gunn Device[J]. Acta Electronica Sinica, 1984, (4): 108-110. DOI：

摘要

采用LPE-GaAs工艺成功地生长成供x波段Gunn器件所需的优质外延材料

其成品率大于80％。用此材料制成的器件成品率大于60％

并已应用在整机上。

Abstract

High quality epitaxial layers for x-band Gunn devices are grown by LPE technology

with a yield of 80%. The yield of the device made of this material is higher than 60%. Such devices are used in different kinds of microwave equipment.

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