Study of Field Effect under Illumination for GD-a-Si<sub>x</sub>C<sub>1-x</sub>:H Films

Wang Yin-yue; Zhang Fang-qing; Wu Xian-cbeng; Chen Guang-hua

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Study of Field Effect under Illumination for GD-a-Si_xC_1-x:H Films

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- Study of Field Effect under Illumination for GD-a-Si_xC_1-x:H Films
- Acta Electronica Sinica Issue 1, Pages: 124-126(1987)
- 作者机构：
  
  兰州大学物理系
- 作者简介：
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- Published：1987
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[1]王印月,张仿清,吴现成,陈光华.GD-a-Si_xC_(1-x):H薄膜光照场效应的研究[J].电子学报,1987(01):124-126.

Wang Yin-yue, Zhang Fang-qing, Wu Xian-cbeng, et al. Study of Field Effect under Illumination for GD-a-Si_xC_1-x:H Films[J]. Acta Electronica Sinica, 1987, (1): 124-126.
[1]王印月,张仿清,吴现成,陈光华.GD-a-Si_xC_(1-x):H薄膜光照场效应的研究[J].电子学报,1987(01):124-126. DOI：

Wang Yin-yue, Zhang Fang-qing, Wu Xian-cbeng, et al. Study of Field Effect under Illumination for GD-a-Si_xC_1-x:H Films[J]. Acta Electronica Sinica, 1987, (1): 124-126. DOI：

摘要

本文利用MOSFET结构研究了GD-a-Si

1-x

:H薄膜的光照场效应以及光电导和S-W效应。实验测得光照引入的缺陷态密度约为10

/cm

.eV。

Abstract

The field effect of GD-a-Six C1-x:H films under illumination and photoconduction as we ll as the S-W effect are studied using the MOSFET structure. The measurement results show that the density of states due to illumination is about 1017/cm2·eV.

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Study of Field Effect under Illumination for GD-a-SixC1-x:H Films

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Study of Field Effect under Illumination for GD-a-Si_xC_1-x:H Films