Study of X-Ray Diffraction in lnxGa1-xAsyP1-y/lnP Heterojunction

Wang Xian-ren; Yan Wei-ping; Lan Tian; Wang Shao-ping

您当前的位置：

首页 >

文章列表页 >

Study of X-Ray Diffraction in ln_xGa_1-xAs_yP_1-y/lnP Heterojunction

更新时间：2025-12-08

- Study of X-Ray Diffraction in ln_xGa_1-xAs_yP_1-y/lnP Heterojunction
- Acta Electronica Sinica Issue 6, Pages: 31-36(1985)
- 作者机构：
  
  1. 吉林大学
  2. 吉林大学长春
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1985
- 稿件说明：
移动端阅览
[1]王贤仁,阎卫萍,兰天,王绍平.In_xGa_(1-x)As_yP_(1-y)/InP异质结的X射线衍射研究[J].电子学报,1985(06):31-36.

Wang Xian-ren, Yan Wei-ping, Lan Tian, et al. Study of X-Ray Diffraction in ln_xGa_1-xAs_yP_1-y/lnP Heterojunction[J]. Acta Electronica Sinica, 1985, (6): 31-36.
[1]王贤仁,阎卫萍,兰天,王绍平.In_xGa_(1-x)As_yP_(1-y)/InP异质结的X射线衍射研究[J].电子学报,1985(06):31-36. DOI：

Wang Xian-ren, Yan Wei-ping, Lan Tian, et al. Study of X-Ray Diffraction in ln_xGa_1-xAs_yP_1-y/lnP Heterojunction[J]. Acta Electronica Sinica, 1985, (6): 31-36. DOI：

摘要

本文采用X射线衍射方法测定了在（001）取向的InP衬底上

用LPE法生长的InGaAsP外延层晶格完整性和应变状态

给出了InGaAsP/InP异质结X射线回摆曲线测量方法和测量结果

提出了用普通X射线衍射仪测量外延层晶格失配在实验方法上的改进

从而提供了在没有双晶衍射仪情况下

测量外延层晶格失配的可行途径。

Abstract

X-ray diffractometry is used to determine the crystal perfection and state of the strain in InGaAsP epitaxial layers grown on （001） oriented InP substrate. The methods and the results of measurement of rocking curves in the InGaAsP/InP heterojunction are given. The improvements of measurement of lattice mismatches by means of X-ray diffractometry are presented

so that one can determine the lattice perfection of epilayers without double-cyrstal spectrometer.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰