Two Oxygen Donors in Annealing NTD CZ Si

Meng Xiang-li

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Two Oxygen Donors in Annealing NTD CZ Si

更新时间：2025-12-08

- Two Oxygen Donors in Annealing NTD CZ Si
- Acta Electronica Sinica Issue 2, Pages: 115-118(1986)
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- Published：1986
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[1]孟祥提.热处理NTD CZ Si中的两个氧施主[J].电子学报,1986(02):115-118.

Meng Xiang-li. Two Oxygen Donors in Annealing NTD CZ Si[J]. Acta Electronica Sinica, 1986, (2): 115-118.
[1]孟祥提.热处理NTD CZ Si中的两个氧施主[J].电子学报,1986(02):115-118. DOI：

Meng Xiang-li. Two Oxygen Donors in Annealing NTD CZ Si[J]. Acta Electronica Sinica, 1986, (2): 115-118. DOI：

摘要

本文用Hall效应、电阻率和红外吸收测量研究了热处理NTD CZ Si中的热施主TD和新施主ND的形成和退火行为。中子辐照使表观TD浓度显著下降

而促使ND的形成。在NTD CZ Si中

氧因辐照增强扩散在无序区处聚集成大尺寸复杂硅-氧集团是ND形成的主要原因。

Abstract

The formation and annealing behavior of the normal donor （TD） and new donor （ND） in NTD CZ Si are studied by Hall effect

electrical resistivine and IR absorption measurements. The apparent TD concentration is decreased obviously and the ND formation can be promoted by neutron irradiation. The main cause of ND formation in NTD CZ Si is that the oxygen atoms aggregate in the disordered region due to radiation enhancing diffusion to form large size complicated silicon oxygen complex.

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