A new hybrid integrated circuit without isolation

DYLMOSIC

has been developed. By increasing and adjusting the technology

P channel MOS transistors and bipolar transistors with large β and small β value for the linear AND-OR gate in DYL are developed on the same wafer

based on the self-isolation characteristics among the linear AND-OR gates

the main logic unit in DYL

and MOSIC. Using the hybrid integrated technology

a inverter unit is constructured by bipolar and MOS transistors on the same N type silicon wafer. The benefits of DYLMOS hybrid integrated circuits are: simple and compatible technology with the linear AND-OR gate in DYL

high input and low output impedance and compatible level with DYL and TTL circuits.