An Improved Model of Thermal Streeses in Power Transistors

Gui Xiang; Wu Wu-chen; Gao Guang-bo

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An Improved Model of Thermal Streeses in Power Transistors

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- An Improved Model of Thermal Streeses in Power Transistors
- Acta Electronica Sinica Issue 3, Pages: 123-125(1986)
- 作者机构：
  
  北京工业大学无线电电子学系
- 作者简介：
- 基金信息：
- DOI：
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- Published：1986
- 稿件说明：
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[1]桂翔,吴武臣,高光渤.关于功率管热应力分析模型的补正意见[J].电子学报,1986(03):123-125.

Gui Xiang, Wu Wu-chen, Gao Guang-bo. An Improved Model of Thermal Streeses in Power Transistors[J]. Acta Electronica Sinica, 1986, (3): 123-125.
[1]桂翔,吴武臣,高光渤.关于功率管热应力分析模型的补正意见[J].电子学报,1986(03):123-125. DOI：

Gui Xiang, Wu Wu-chen, Gao Guang-bo. An Improved Model of Thermal Streeses in Power Transistors[J]. Acta Electronica Sinica, 1986, (3): 123-125. DOI：

摘要

本文对G.A.Lang等关于功率晶体管热疲劳失效研究的理论模型提出了商榷意见

并给出了其补正形式和解析解。这一结果也适用于其他具有多层结构的电子器件。

Abstract

An improvement on G.A. Lang et al. s model of thermal fatigue in power transistors is presented

and corrective equations as well as analytical solutions are given. These results are also applicable for other electron devices with multiple-layer structures.

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