Investigation of Rapid Annealing of Boron-Ion Implanted Si Wafer by a Large Area Electron Beam

杜元成; 郁曾期; 孙迭篪; 李富铭

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Investigation of Rapid Annealing of Boron-Ion Implanted Si Wafer by a Large Area Electron Beam

更新时间：2025-12-08

- Investigation of Rapid Annealing of Boron-Ion Implanted Si Wafer by a Large Area Electron Beam
- Acta Electronica Sinica Issue 1, Pages: 115-117(1986)
- 作者机构：
  
  复旦大学
- 作者简介：
- 基金信息：
- DOI：
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- Published：1986
- 稿件说明：
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[1]杜元成,郁曾期,孙迭篪,李富铭.大面积电子束对硼离子注入硅片快速退火的研究[J].电子学报,1986(01):115-117.

杜元成, 郁曾期, 孙迭篪, et al. Investigation of Rapid Annealing of Boron-Ion Implanted Si Wafer by a Large Area Electron Beam[J]. Acta Electronica Sinica, 1986, (1): 115-117.
[1]杜元成,郁曾期,孙迭篪,李富铭.大面积电子束对硼离子注入硅片快速退火的研究[J].电子学报,1986(01):115-117. DOI：

杜元成, 郁曾期, 孙迭篪, et al. Investigation of Rapid Annealing of Boron-Ion Implanted Si Wafer by a Large Area Electron Beam[J]. Acta Electronica Sinica, 1986, (1): 115-117. DOI：

摘要

本文介绍了一种采用冷阴极大面积电子束对硼离子注入硅片快速退火的实验方法。测试分析结果表明:本法与常规退火方法相比

除了有相同的电激活和晶格恢复之外

还具有快速、低温和杂质再分布影响小等特点。

Abstract

The experimental method and results for rapid annealing of Boron ion implanted Si wafers by a large area electron beam are presented. The analysis with skeet resistivity

X ray diffraction

laser Raman spectroscopy

and SIMS indicates that this technique compares favorably with the conventional furnace annealing

giving advantages of low temperature rapid annealing and little diffusion of the dopants.

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