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1. 复旦大学
2. 上海元件五厂
3. 上海第二冶炼厂
4. 上海无线电十七厂
Published:1985
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[1]宗祥福,顾孝义,戚盛勇,神承复,罗林基,黄慧玲,俞桂贞,袁小莺,秦涛,杨灏,陈智生.氧本征吸除工艺的实验研究[J].电子学报,1985(01):80-85.
Zong Xiang-fu, Gu Xiao-yi, Qi Sheng-yong, et al. The Experimental Reaserch of Oxygen Intrinsic Gettering[J]. Acta Electronica Sinica, 1985, (1): 80-85.
通过红外吸收测量、带电粒子活化分析及腐蚀后的金相观察
证实了经三步热处理退火后的CZ硅片
表面层氧外扩散而形成“清洁区”
体内氧沉淀形成高密度的缺陷区。采用中子活化、C-T测量、p-n结试验等技术
证实了氧本征吸除的吸杂效果。
The variation of the state of oxygen in CZ silicon wafer and the distribution of precipitate are studied by infrared absorption measurement
charged-particle analysis and etching metallographic examination. The effect of oxygen intrinsic gettering is proved by some analytical methods such as C-T measurement
neutron activate analysis and.p-n junction test.
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