EPR Measurement of Annealing Effects in a-Si: F Produced by Ion Implantation

Liu Xiang-huai

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EPR Measurement of Annealing Effects in a-Si: F Produced by Ion Implantation

更新时间：2025-12-08

- EPR Measurement of Annealing Effects in a-Si: F Produced by Ion Implantation
- Acta Electronica Sinica Issue 1, Pages: 118-119(1986)
- 作者机构：
  
  1.   中国科学院上海冶金研究所
  2.   Universite Louis Pasteur
  3.   Strasbourg Cedex
  4.   France
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1986
- 稿件说明：
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[1]柳襄怀,A. Goltzene.离子注入α-Si:F退火效应的EPR测量[J].电子学报,1986(01):118-119.

Liu Xiang-huai. EPR Measurement of Annealing Effects in a-Si: F Produced by Ion Implantation[J]. Acta Electronica Sinica, 1986, (1): 118-119.
[1]柳襄怀,A. Goltzene.离子注入α-Si:F退火效应的EPR测量[J].电子学报,1986(01):118-119. DOI：

Liu Xiang-huai. EPR Measurement of Annealing Effects in a-Si: F Produced by Ion Implantation[J]. Acta Electronica Sinica, 1986, (1): 118-119. DOI：

摘要

本文用电子顺磁共振（EPR）测量了离子注入a-Si:F中悬键密度随退火温度变化的关系。总吸收率A的最小值用同一退火方法所测得的室温电导最低点所对应的退火温度一致

EPR测量证明

a-Si:F比a-Si:H具有更好的热稳定性

是颇有希望用于器件制造的较好材料。

Abstract

The variation of the dangling bonds with annealing temperature in a-Si: F produced by ion implantation is measured by EPR. The minimum of the integrated absorption A is located in the same temperature range as that of the room temperature conductivity of a-Si: F films annealed in the same way. EPR assessment of a-Si: F confirms it great thermal stability compared to a-Si: H

opening prospects for a potentially better material for device fabrication.

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