Selective Doped Heterojunction Transistor

Wei Ce-jun; Yin Xiao-ming; Shao Quan-yuan; Cheng Zhen-yong

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Selective Doped Heterojunction Transistor

更新时间：2025-12-08

- Selective Doped Heterojunction Transistor
- Acta Electronica Sinica Issue 6, Pages: 116-117(1985)
- 作者机构：
  
  中国科学院半导体研究所
- 作者简介：
- 基金信息：
- DOI：
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- Published：1985
- 稿件说明：
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[1]魏策军,尹晓明,邵全远,陈振荣.选择性掺杂异质结晶体管[J].电子学报,1985(06):116-117.

Wei Ce-jun, Yin Xiao-ming, Shao Quan-yuan, et al. Selective Doped Heterojunction Transistor[J]. Acta Electronica Sinica, 1985, (6): 116-117.
[1]魏策军,尹晓明,邵全远,陈振荣.选择性掺杂异质结晶体管[J].电子学报,1985(06):116-117. DOI：

Wei Ce-jun, Yin Xiao-ming, Shao Quan-yuan, et al. Selective Doped Heterojunction Transistor[J]. Acta Electronica Sinica, 1985, (6): 116-117. DOI：

摘要

利用国产MBE系统外延生长的调制掺杂材料

试制出选择性掺杂晶体管或高电子迁移率晶体管（HEMT）。准增强型器件的跨导为60～90mS/mm。有些器件发现有负阻

跨导达190mS/mm。

Abstract

Selective doped heterojunction transistor or high electron mobility transistor is fabricated with modulation doping material grown by a home-made MBE system. The transconductance for quasi-enhan-cement-mode devices is 60-90 mS/mm. Large negative conductance is observed with a corresponding trans-conductance of about 190 mS/mm.

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