Investigation of N-InP Schottky Barrier with Anodic Oxidic Film

Hu Bing-hua; Zhou Bing-lin; Zhang Hong-fang

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Investigation of N-InP Schottky Barrier with Anodic Oxidic Film

更新时间：2025-12-08

- Investigation of N-InP Schottky Barrier with Anodic Oxidic Film
- Acta Electronica Sinica Issue 1, Pages: 119-121(1985)
- 作者机构：
  
  中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1985
- 稿件说明：
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[1]胡冰华,周炳林,张洪方.具有阳极氧化层的N-InP肖特基势垒的研究[J].电子学报,1985(01):119-121.

Hu Bing-hua, Zhou Bing-lin, Zhang Hong-fang. Investigation of N-InP Schottky Barrier with Anodic Oxidic Film[J]. Acta Electronica Sinica, 1985, (1): 119-121.
[1]胡冰华,周炳林,张洪方.具有阳极氧化层的N-InP肖特基势垒的研究[J].电子学报,1985(01):119-121. DOI：

Hu Bing-hua, Zhou Bing-lin, Zhang Hong-fang. Investigation of N-InP Schottky Barrier with Anodic Oxidic Film[J]. Acta Electronica Sinica, 1985, (1): 119-121. DOI：

摘要

用阳极氧化方法在N-InP与金属之间夹入薄层自体氧化物

得到了势垒高度φB>0.70eV

理想因子n=1.1～1.4的肖特基结

并用DLTS法在该结中测出一个位于导带之下0.62eV的较深的电子陷阱。最后

采用稍加修正的肖特基势垒模型解释了势垒高度的增加。结果表明

氧化层中的固定电荷对势垒高度的影响是极其重要的。

Abstract

High quality InP Schottky barrier can be obtained by inserting a thin native oxide grown with the anodic oxidation technique

with a barrier height φB greater than 0.70eV and an ideality factor of about 1.1-1.4. An electron trap of 0.62eV is found in the bulk and epitaxial crystals by using the DLTS technique. The barrier height increase can be explained with the generalized model slightly modified.

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