Influence of Oxygen on the Photo-induced Effect in a-Si:H

Zhang Xi-kang; Wang Ying; Bei Guo-ren; Jiang Mian-heng; Wang Qi-min

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Influence of Oxygen on the Photo-induced Effect in a-Si:H

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- Influence of Oxygen on the Photo-induced Effect in a-Si:H
- Acta Electronica Sinica Issue 2, Pages: 117-120(1985)
- 作者机构：
  
  中国科学院上海冶金所
- 作者简介：
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- DOI：
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- Published：1985
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[1]章熙康,王缨,白国仁,江绵恒,王其闵.氧对a-Si:H光诱导效应的影响[J].电子学报,1985(02):117-120.

Zhang Xi-kang, Wang Ying, Bei Guo-ren, et al. Influence of Oxygen on the Photo-induced Effect in a-Si:H[J]. Acta Electronica Sinica, 1985, (2): 117-120.
[1]章熙康,王缨,白国仁,江绵恒,王其闵.氧对a-Si:H光诱导效应的影响[J].电子学报,1985(02):117-120. DOI：

Zhang Xi-kang, Wang Ying, Bei Guo-ren, et al. Influence of Oxygen on the Photo-induced Effect in a-Si:H[J]. Acta Electronica Sinica, 1985, (2): 117-120. DOI：

摘要

研究了氧掺杂对a-Si:H光诱导Staebler-Wronski效应的影响（随着掺氧量的增加

光诱导效应减弱）。在掺氧的a-si:H中

红外吸收光谱显示出氧原子主要作为氢原子附近的弱Si-Si键的桥键原子。吸收系数和光子能量的关系表明有Urbach吸收边存在

且微量氧将使a-Si:H网络的无序度降低。同时

光照大大促进桥键氧原子的耦合

弱Si-Si键被打断。因此

掺氧的a-Si:H膜的Staebler-Wronski效应减弱是由于微量氧原子稳定了弱Si-Si键的缘故。

Abstract

The photo-induced conductance change decreases with the increase in oxygen content in the a-Si:H films. The IR absorption spectra show that in oxygen-doped a-Si:H Films

oxygen atoms serve as bridging atoms in the Si-Si weak bonds. The analysis of absorption data indicates that a small amount of oxygen can reduce the disorder of a-Si:H networks. In addition

illumination promotes the coupling of bridging oxygen atoms

suggesting that the Si-Si weak bonds are broken by photons during illumination. From the experimental results it is concluded that oxygen atoms stabilize the weak bonds and thus reduce the photo-induced conductance change.

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