The factors influencing the current gain hFE temperature dependence in silicon bipolar transistors is investigated. Taking into account the effect of non-ideal factor n in the medium current range a concept of the "apparent amount of bandgap narrowing" is introduced and a theoretical model of the current gain hFE temperature dependence is presented. Experimental investigation on the heavy doping effect in silicon bipolar transistor is carried out.Based on the theoretical model

a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully.