Investigation of Mechanism of Latent-Image Photoetching

Liu Ji-min; Guo Zeng-quan; Lin Da-hong

您当前的位置：

首页 >

文章列表页 >

Investigation of Mechanism of Latent-Image Photoetching

更新时间：2025-12-08

- Investigation of Mechanism of Latent-Image Photoetching
- Acta Electronica Sinica Issue 2, Pages: 63-69(1984)
- 作者机构：
  
  中国科学院半导体研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1984
- 稿件说明：
移动端阅览
[1]刘济民,郭增权,李大虹.无显影光刻机理的探讨[J].电子学报,1984(02):63-69.

Liu Ji-min, Guo Zeng-quan, Lin Da-hong. Investigation of Mechanism of Latent-Image Photoetching[J]. Acta Electronica Sinica, 1984, (2): 63-69.
[1]刘济民,郭增权,李大虹.无显影光刻机理的探讨[J].电子学报,1984(02):63-69. DOI：

Liu Ji-min, Guo Zeng-quan, Lin Da-hong. Investigation of Mechanism of Latent-Image Photoetching[J]. Acta Electronica Sinica, 1984, (2): 63-69. DOI：

摘要

本文研究了无显影光刻的机理

得出的结论是:氢氟酸与SiO

反应生成气态SiF

是无显影光刻实现的基础

凝胶的半透膜物化作用是促进氢氟酸腐蚀作用的媒介;光敏物质经光化学反应形成或改变其共振结构

是导致氢氟酸腐蚀效率改变的关键。

Abstract

The mechanism of latent-image photoetching is investigated. The conclusion is that the reaction of fluorhydric acid and silicon dioxide is the base of latent-image etching. The semipermeable membrane of gel film promotes the etching. Under photochemical reaction the photosensitizer becomes the resonance system which affects the etching rate.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰