Some Experimental Investigations of the GaAs Proton Isolation Region and Their Applications

Han Ji-hong; Wu Lu-xun; Shao Zhen-ya

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Some Experimental Investigations of the GaAs Proton Isolation Region and Their Applications

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- Some Experimental Investigations of the GaAs Proton Isolation Region and Their Applications
- Acta Electronica Sinica Issue 6, Pages: 97-99(1984)
- 作者机构：
  
  南京固体器件研究所
- 作者简介：
- 基金信息：
- DOI：
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- Published：1984
- 稿件说明：
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[1]韩继鸿,吴禄训,邵振亚.GaAs质子隔离区的实验研究及应用[J].电子学报,1984(06):97-99.

Han Ji-hong, Wu Lu-xun, Shao Zhen-ya. Some Experimental Investigations of the GaAs Proton Isolation Region and Their Applications[J]. Acta Electronica Sinica, 1984, (6): 97-99.
[1]韩继鸿,吴禄训,邵振亚.GaAs质子隔离区的实验研究及应用[J].电子学报,1984(06):97-99. DOI：

Han Ji-hong, Wu Lu-xun, Shao Zhen-ya. Some Experimental Investigations of the GaAs Proton Isolation Region and Their Applications[J]. Acta Electronica Sinica, 1984, (6): 97-99. DOI：

摘要

本文报导了用质子隔离技术来制造功率FET的实验结果。质子隔离的功率FET的隔离区具有较好的热稳定性。文中给出了器件的可靠性数据。

Abstract

Some experimental results of the proton isolation technology for the GaAs power MESFETs fabrication are reported. A fine thermal stability is found in the proton-isolated regions of FETs

and the data of the device reliability are given.

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