XPS Studies of Anodic Oxidation of Silicon

Zhong Xiang-fu; Chen Yi; Zhang Guo-lu

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XPS Studies of Anodic Oxidation of Silicon

更新时间：2025-12-08

- XPS Studies of Anodic Oxidation of Silicon
- Acta Electronica Sinica Issue 2, Pages: 108-112(1984)
- 作者机构：
  
  1. 复旦大学材料科学研究所
  2. 复旦大学材料科学研究所上海
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1984
- 稿件说明：
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[1]宗祥福,陈一,张过路.硅阳极氧化的XPS研究[J].电子学报,1984(02):108-112.

Zhong Xiang-fu, Chen Yi, Zhang Guo-lu. XPS Studies of Anodic Oxidation of Silicon[J]. Acta Electronica Sinica, 1984, (2): 108-112.
[1]宗祥福,陈一,张过路.硅阳极氧化的XPS研究[J].电子学报,1984(02):108-112. DOI：

Zhong Xiang-fu, Chen Yi, Zhang Guo-lu. XPS Studies of Anodic Oxidation of Silicon[J]. Acta Electronica Sinica, 1984, (2): 108-112. DOI：

摘要

硅-二氧化硅界面过渡区的状态与半导体器件制造工艺有密切关系。以不同的光电子发射角对不同的阳极氧化样品得到的XPS（X-ray Photoelectron Spectroscopy）谱表明;阳极氧化生成的氧化层接近双层突变结构

而热氧化生长层的界面存在过渡层。本文讨论了阳极氧化生长过程

分析了两种氧化方法引起过渡区差别的原因.

Abstract

The status of transition region of Si-SiO2 interface is closely related to the character of device.XPS spectra are obtained from different specimens of anodic oxidation at differnt angles of photo-electron emission. It is shown that the oxide of anodic oxidation has a abrupt structure

and the oxide interface of thermal oxidation has a marked transition layer. The process of the anodic oxidation is discussed and the causes for the different results by the two methods of oxidation are analyzed.

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