Investigation on Ohmic Contact Achieved by Capacitance Discharging

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- Investigation on Ohmic Contact Achieved by Capacitance Discharging
- Acta Electronica Sinica Issue 3, Pages: 105-107(1984)
- 作者机构：
  
  南京大学物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1984
- 稿件说明：
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[1]陈存礼.电容放电实现欧姆接触的研究[J].电子学报,1984(03):105-107.

Chen Cun-li. Investigation on Ohmic Contact Achieved by Capacitance Discharging[J]. Acta Electronica Sinica, 1984, (3): 105-107.
[1]陈存礼.电容放电实现欧姆接触的研究[J].电子学报,1984(03):105-107. DOI：

Chen Cun-li. Investigation on Ohmic Contact Achieved by Capacitance Discharging[J]. Acta Electronica Sinica, 1984, (3): 105-107. DOI：

本文报导了一种用电容放电代替常规热合金化实现 Al-Si 欧姆接触的简捷方法。该法能有效地抑制导致浅结器件失效的 Al-Si 互扩散现象

从而具有良好的结特性。

A Simple and direct method

Al-Si ohmic contact achieved by utilizing capacitance dischar- ging instead of conventional sintering

is introduced.Using this method

Al-Si interdiffusion phenomenon which causes the failure for shallow junction device can be restricted effectively.

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