The Effects or Si<sub>3</sub>N<sub>4</sub> Film on IC Transistors

Jin Qi; Wu Xian-ping

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The Effects or Si₃N₄ Film on IC Transistors

更新时间：2025-12-08

- The Effects or Si₃N₄ Film on IC Transistors
- Acta Electronica Sinica Issue 3, Pages: 56-62(1985)
- 作者机构：
  
  复旦大学
- 作者简介：
- 基金信息：
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- Published：1985
- 稿件说明：
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[1]晋琦,吴宪平.Si_3N_4薄膜对集成晶体管特性的影响[J].电子学报,1985(03):56-62.

Jin Qi, Wu Xian-ping. The Effects or Si₃N₄ Film on IC Transistors[J]. Acta Electronica Sinica, 1985, (3): 56-62.
[1]晋琦,吴宪平.Si_3N_4薄膜对集成晶体管特性的影响[J].电子学报,1985(03):56-62. DOI：

Jin Qi, Wu Xian-ping. The Effects or Si₃N₄ Film on IC Transistors[J]. Acta Electronica Sinica, 1985, (3): 56-62. DOI：

摘要

本文研究了用不同的制备方法

以及制备不同厚度的Si

膜对集成晶体管电流增益的影响

取得了能明显地提高电流增益的最佳Si

膜厚及其制备的方法。通过对硅片平整度和少子寿命的测试

估计了Si

膜对硅片因热氧化而引起的表面应力的补偿作用

发现电流增益提升效果最佳的Si

膜与最佳的表面应力补偿相对应

这时的硅片少子寿命最长。

Abstract

The effects of Si3N4 film on the current gain of npn and pnp transistors are investigated for different film thicknesses and deposition processes. The conditions for maximum current gain improvement are observed. Flatness measurements and the measurements of minority carrier lifetime show that the conditions for maximum current gain improvement correspond to the best stress compensation and the highest minority carrier lifetime.

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The Effects or Si3N4 Film on IC Transistors

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The Effects or Si₃N₄ Film on IC Transistors