Tunnelling Effect at E-B Junction Surface to Determine β at Low Collector Current

Lin Zhao-hni; Xu Hui-ying

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Tunnelling Effect at E-B Junction Surface to Determine β at Low Collector Current

更新时间：2025-12-08

- Tunnelling Effect at E-B Junction Surface to Determine β at Low Collector Current
- Acta Electronica Sinica Issue 6, Pages: 68-72(1984)
- 作者机构：
  
  北京大学物理系
- 作者简介：
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- Published：1984
- 稿件说明：
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[1]林昭(火回),许惠英.决定晶体管小电流β值的发射结表面隧道效应[J].电子学报,1984(06):68-72.

Lin Zhao-hni, Xu Hui-ying. Tunnelling Effect at E-B Junction Surface to Determine β at Low Collector Current[J]. Acta Electronica Sinica, 1984, (6): 68-72.
[1]林昭(火回),许惠英.决定晶体管小电流β值的发射结表面隧道效应[J].电子学报,1984(06):68-72. DOI：

Lin Zhao-hni, Xu Hui-ying. Tunnelling Effect at E-B Junction Surface to Determine β at Low Collector Current[J]. Acta Electronica Sinica, 1984, (6): 68-72. DOI：

摘要

对于平面型硅双极晶体管

在发射区和基区表面杂质浓度较高和发射结表面界面态密度较大时

电流增益的减少以及其随温度下降而减小的物理原因是载流子经由发射结表面禁带中局域态的隧道效应。同时指出了提高硅双极扩散平面晶体管的小电流时的电流增益和使其随温度变化缓慢的途径。

Abstract

The pronounced fall-off of the current gain and the decrease of current gain with decreasing temperature in the low current range is caused by carrier tunnelling near the surface of the emitter-base junction

and occurs through the localized states within the bandgap when the surface of the emitter region and base region in the silicon planar transistor have a high surface impurity concentration or a high localized state density.

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