Semiconductor Surface Varactor with Insulating a-Si Layer

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- Semiconductor Surface Varactor with Insulating a-Si Layer
- Acta Electronica Sinica Issue 1, Pages: 122-123(1985)
- 作者机构：
  
  兰州大学物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1985
- 稿件说明：
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[1]王万录,沈浩平.用非晶硅作绝缘层的表面变容二极管[J].电子学报,1985(01):122-123.

Wang Wan-lu, Shen Hao-ping. Semiconductor Surface Varactor with Insulating a-Si Layer[J]. Acta Electronica Sinica, 1985, (1): 122-123.
[1]王万录,沈浩平.用非晶硅作绝缘层的表面变容二极管[J].电子学报,1985(01):122-123. DOI：

Wang Wan-lu, Shen Hao-ping. Semiconductor Surface Varactor with Insulating a-Si Layer[J]. Acta Electronica Sinica, 1985, (1): 122-123. DOI：

本文提出了一种用a-Si作绝缘层的表面变容二极管。该器件光敏性高

电容比大

稳定性好以及制造工艺简单

可望获得新的应用。

A Semiconductor surface varactor with an insulating a-Si layer is presented.It has higher photc-sensitivity

varactor ratio and stability

and is easier to manufacture and very promising for new applications.

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