A New Semiconductor Switching Device with Bidirectional NegativeResistance Characteirstic

Li Feng-yin; Cao Ti-lun

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A New Semiconductor Switching Device with Bidirectional NegativeResistance Characteirstic

更新时间：2025-12-08

- A New Semiconductor Switching Device with Bidirectional NegativeResistance Characteirstic
- Acta Electronica Sinica Issue 4, Pages: 112(1984)
- 作者机构：
  
  1. 辽宁朝阳无线电元件厂
  2. 中国科学院半导体研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1984
- 稿件说明：
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[1]李凤银,周旋,李锦林,曹体伦.双向负阻晶体管,一种新的半导体开关器件[J].电子学报,1984(04):112.

Li Feng-yin, Cao Ti-lun. A New Semiconductor Switching Device with Bidirectional NegativeResistance Characteirstic[J]. Acta Electronica Sinica, 1984, (4): 112.
[1]李凤银,周旋,李锦林,曹体伦.双向负阻晶体管,一种新的半导体开关器件[J].电子学报,1984(04):112. DOI：

Li Feng-yin, Cao Ti-lun. A New Semiconductor Switching Device with Bidirectional NegativeResistance Characteirstic[J]. Acta Electronica Sinica, 1984, (4): 112. DOI：

摘要

<正> 已知的几种半导体负阻器件

都各具优缺点。如隧道二极管的开关速度很快

但提供的输出脉冲幅度较小（几百mV）。雪崩晶体管具有毫微秒范围的响应时间

但通常要求较高的直流电压(几十伏至

Abstract

A new semiconductor switching device with bidirectional negative resistance characteristic is developed. The device called Bidirectional Negative Resistance Transistor （BNRT） is based on a combined structure of a transverse transistor and two longitudinal transistors. The BNRT is made by Si epi-taxitl planar transistor technology

and it can readily with TTL integral. The response rise time measured for the first fabricated BNRT’s is 10-30 ns

and the amplitude of the output pulse is 3-4V at 50Ω load.

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