Research and Improvement of MOS Self-Bias Voltage Generator in LSI

Wang Ren-li; Yue Zhen-wu; Shi Bing-xue; Li Zhi-jian.

您当前的位置：

首页 >

文章列表页 >

Research and Improvement of MOS Self-Bias Voltage Generator in LSI

更新时间：2025-12-08

- Research and Improvement of MOS Self-Bias Voltage Generator in LSI
- Acta Electronica Sinica Issue 2, Pages: 34-41(1984)
- 作者机构：
  
  1. 清华大学
  2. 清华大学北京
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1984
- 稿件说明：
移动端阅览
[1]汪仁里,岳震五,石秉学,李志坚.MOSLSI自给衬偏电路的研究与改进[J].电子学报,1984(02):34-41.

Wang Ren-li, Yue Zhen-wu, Shi Bing-xue, et al. Research and Improvement of MOS Self-Bias Voltage Generator in LSI[J]. Acta Electronica Sinica, 1984, (2): 34-41.
[1]汪仁里,岳震五,石秉学,李志坚.MOSLSI自给衬偏电路的研究与改进[J].电子学报,1984(02):34-41. DOI：

Wang Ren-li, Yue Zhen-wu, Shi Bing-xue, et al. Research and Improvement of MOS Self-Bias Voltage Generator in LSI[J]. Acta Electronica Sinica, 1984, (2): 34-41. DOI：

摘要

本文对MOS自给衬偏电路的工作原理和特性进行了定量的分析和研究

得出了一个有助于设计的等效电路

用此算出的输出特性与实验结果基本一致。设计并研制成功一种高效能衬偏产生器

它能输出-5V的衬偏电压

供给大于50μA的输出电流。

Abstract

A quantitative analysis for MOS self-bias substrate voltage generator circuit is presented. An equivalent circuit of this generator is obtained for design use. The output performance calculated with this equivalent circuit basically coincides with the experimented results. A new substrate bias voltage generator with high efficiency is developed

with a substrate bias voltage output of -5V and a current output higher than 50μA.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰