Electrical Properties of Boron-Implanted Polysilicon Films

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- Electrical Properties of Boron-Implanted Polysilicon Films
- Acta Electronica Sinica Issue 3, Pages: 101-104(1984)
- 作者机构：
  
  1. 华东师范大学
  2. 上海冶金研究所
  3. 华东师范大学上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1984
- 稿件说明：
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[1]王济身,徐静芳,陈建武,邹世昌,林成鲁,倪如山.硼离子注入多晶硅薄膜的电学性质[J].电子学报,1984(03):101-104.

Wang Ji-shen Xu Jing-fang Chen Jian-wu. Electrical Properties of Boron-Implanted Polysilicon Films[J]. Acta Electronica Sinica, 1984, (3): 101-104.
[1]王济身,徐静芳,陈建武,邹世昌,林成鲁,倪如山.硼离子注入多晶硅薄膜的电学性质[J].电子学报,1984(03):101-104. DOI：

Wang Ji-shen Xu Jing-fang Chen Jian-wu. Electrical Properties of Boron-Implanted Polysilicon Films[J]. Acta Electronica Sinica, 1984, (3): 101-104. DOI：

本文测量了硼离子注入多晶硅薄膜经热退火及激光退火后的电学性质

并用晶界陷阱模型进行了理论计算。计算结果与实验符合。发现经激光退火后

晶粒变得足够大时迁移率最小值发生在10

-17

-8

附近

而不是在 N=N

处。

The electrical properties of boron-implanted polysilicon after thermal and laser annealing are measured

and theoretical calculations are made by using the grain boundary trapping model

giving results in good agreement with experiments.It is found that after laser annealing

when the grain size becomes large enough

the minimum of the mobility is not at N=N

but appears near N=10

-3

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