Optical and Electrical Properties of Sputtered a-Si<sub>x</sub>C<sub>1-x</sub>: H Films

您当前的位置：

首页 >

文章列表页 >

Optical and Electrical Properties of Sputtered a-Si_xC_1-x: H Films

更新时间：2025-12-08

- Optical and Electrical Properties of Sputtered a-Si_xC_1-x: H Films
- Acta Electronica Sinica Issue 6, Pages: 102-104(1984)
- 作者机构：
  
  兰州大学物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1984
- 稿件说明：
移动端阅览
[1]张仿清,张南屏,刘智,王印月,陈光华.溅射法制备a-Si_xC_(1-x):H薄膜光电性能的研究[J].电子学报,1984(06):102-104.

Zhang Fang-qing, Zhang Nan-ping, Liu zhi, et al. Optical and Electrical Properties of Sputtered a-Si_xC_1-x: H Films[J]. Acta Electronica Sinica, 1984, (6): 102-104.
[1]张仿清,张南屏,刘智,王印月,陈光华.溅射法制备a-Si_xC_(1-x):H薄膜光电性能的研究[J].电子学报,1984(06):102-104. DOI：

Zhang Fang-qing, Zhang Nan-ping, Liu zhi, et al. Optical and Electrical Properties of Sputtered a-Si_xC_1-x: H Films[J]. Acta Electronica Sinica, 1984, (6): 102-104. DOI：

本文介绍了用溅射法制备的a-Si

1-x

:H薄膜光学带隙和电导激活能与碳含量的关系

测量了所得样品的红外吸收谱、光电子谱及折射率。对所得结果进行了初步的讨论。

The relations among the band gap

conductive activation energy and the carbon content in the SP-a-SixC1 -x: H films are presented

together with the IR and XPS spectra and refractive index

and followed by some preliminary discussions of the obtained results.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰

Optical and Electrical Properties of Sputtered a-SixC1-x: H Films