Velocity Overshoot Effects on Parameters of Short Channel GaAs MESFET

Feng Yu-kun

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Velocity Overshoot Effects on Parameters of Short Channel GaAs MESFET

更新时间：2025-12-08

- Velocity Overshoot Effects on Parameters of Short Channel GaAs MESFET
- Acta Electronica Sinica Issue 3, Pages: 64-70(1984)
- 作者机构：
  
  成都电讯工程学院
- 作者简介：
- 基金信息：
- DOI：
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- Published：1984
- 稿件说明：
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[1]冯育坤.速度过冲对短沟道GaAs MESFET器件参数的影响[J].电子学报,1984(03):64-70.

Feng Yu-kun. Velocity Overshoot Effects on Parameters of Short Channel GaAs MESFET[J]. Acta Electronica Sinica, 1984, (3): 64-70.
[1]冯育坤.速度过冲对短沟道GaAs MESFET器件参数的影响[J].电子学报,1984(03):64-70. DOI：

Feng Yu-kun. Velocity Overshoot Effects on Parameters of Short Channel GaAs MESFET[J]. Acta Electronica Sinica, 1984, (3): 64-70. DOI：

摘要

利用 GaAs 新的速场关系考察了速度过冲对短沟道 GaAs MESFET 性能的影响。发展了短沟道 GaAs MESFET 的稳态偶极畴模型。对新模型的分析表明

速度过冲对短沟道 GaAsMESFET 的性能有重要改善。按稳态偶极畴模型工作的器件

极限频率主要由跨导截止频率 f

决定

抑制畴的形成可以得到高的极限频率。

Abstract

The effects of velocity overshoot on the device parameters of short channel GaAs MESFET have been investigated.The stationary dipolar domain model has been stu- died.The results show that velocity overshoot improves the device parameters.and that frequ- ency limitation depends on transconductance cutoff frequency ffor the device operating at the stationary dipolar domain model.Frequency limitation can be increased by eliminating the domain or suitably controlling the form of the domain.

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