High Sensitivity Measurement of Reverse Leakage Current of Semiconductor Devices

Xu Jian-shi

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High Sensitivity Measurement of Reverse Leakage Current of Semiconductor Devices

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- High Sensitivity Measurement of Reverse Leakage Current of Semiconductor Devices
- Acta Electronica Sinica Issue 4, Pages: 108-110(1983)
- 作者机构：
  
  1. 济南市电子局
  2. 山东工学院
  3. 济南市电子局山东工学院
- 作者简介：
- 基金信息：
- DOI：
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- Published：1983
- 稿件说明：
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[1]徐剑石,庄绍雄.半导体器件反向漏电流的高灵敏度测量[J].电子学报,1983(04):108-110.

Xu Jian-shi. High Sensitivity Measurement of Reverse Leakage Current of Semiconductor Devices[J]. Acta Electronica Sinica, 1983, (4): 108-110.
[1]徐剑石,庄绍雄.半导体器件反向漏电流的高灵敏度测量[J].电子学报,1983(04):108-110. DOI：

Xu Jian-shi. High Sensitivity Measurement of Reverse Leakage Current of Semiconductor Devices[J]. Acta Electronica Sinica, 1983, (4): 108-110. DOI：

摘要

本文在对运放分压式反馈高灵敏度电流测量电路的极限灵敏度、稳定性等问题进行分析的基础上

报导了一种用于半导体器件直流参数高灵敏度测量的仪器。

Abstract

A method for measuring high sensitivity current by means of current amplifier with voltage divider feedback is discussed in this paper. The limit sensitivity and stability of this current-voltage measurement circuit is analysed. On the basis of the discussion

a measurement instrument （JB-7705） of DC parameter of semiconductor devices is developed.

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