Determination of Total Amount of Oxygen Atoms in Silicon Surface Layers by Nuclear Reaction

Qian Jirg-hua; Zang De-hong; Zhang Bao-quan; Zhang Yu-rong; Wu Xiao-feng; Wang Wei-long; Zhang A-gerg; Zhang Long-xing; Hu Rui- juan; Shen Cheng-fu

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Determination of Total Amount of Oxygen Atoms in Silicon Surface Layers by Nuclear Reaction

更新时间：2025-12-08

- Determination of Total Amount of Oxygen Atoms in Silicon Surface Layers by Nuclear Reaction
- Acta Electronica Sinica Issue 2, Pages: 116-118(1984)
- 作者机构：
  
  复旦大学核科学系
- 作者简介：
- 基金信息：
- DOI：
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- Published：1984
- 稿件说明：
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[1]钱景华,臧德鸿,张宝全,张钰蓉,吴小凤,王维龙,张阿根,张龙兴,胡瑞娟,神承复.用核反应法测定硅表面氧含量[J].电子学报,1984(02):116-118.

Qian Jirg-hua, Zang De-hong, Zhang Bao-quan, et al. Determination of Total Amount of Oxygen Atoms in Silicon Surface Layers by Nuclear Reaction[J]. Acta Electronica Sinica, 1984, (2): 116-118.
[1]钱景华,臧德鸿,张宝全,张钰蓉,吴小凤,王维龙,张阿根,张龙兴,胡瑞娟,神承复.用核反应法测定硅表面氧含量[J].电子学报,1984(02):116-118. DOI：

Qian Jirg-hua, Zang De-hong, Zhang Bao-quan, et al. Determination of Total Amount of Oxygen Atoms in Silicon Surface Layers by Nuclear Reaction[J]. Acta Electronica Sinica, 1984, (2): 116-118. DOI：

摘要

简要介绍了用核反应

6О（d

）

7О分析硅表面氧含量的方法。鉴别了集成电路制备工艺中对硅表面氧化层的清洗效果

给出了对硅表面自然氧化过程的观察结果。

Abstract

Principles and advantages of oxygen analysis on silicon surfaces by nuclear reaction 16O（d

P1）17O* are described

with a sensitivity of 1×1015 atoms/cm2. The effect of cleaning silicon oxide on surfaces during the silicon （integrated） device process is distinct. Observations on the growth of oxidic layers on silicon surfaces are given.

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