A Study of Low Drift in High Precision IC Operational Amplifier

Chen Jin-song

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A Study of Low Drift in High Precision IC Operational Amplifier

更新时间：2025-12-08

- A Study of Low Drift in High Precision IC Operational Amplifier
- Acta Electronica Sinica Issue 2, Pages: 85-89(1983)
- 作者机构：
  
  中国科学技术大学
- 作者简介：
- 基金信息：
- DOI：
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- Published：1983
- 稿件说明：
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[1]陈金松.高精度集成运放低漂移性能的研究[J].电子学报,1983(02):85-89.

Chen Jin-song. A Study of Low Drift in High Precision IC Operational Amplifier[J]. Acta Electronica Sinica, 1983, (2): 85-89.
[1]陈金松.高精度集成运放低漂移性能的研究[J].电子学报,1983(02):85-89. DOI：

Chen Jin-song. A Study of Low Drift in High Precision IC Operational Amplifier[J]. Acta Electronica Sinica, 1983, (2): 85-89. DOI：

摘要

本文对以超β管为输入级的集成运放的温漂进行了较为详细的计算

认为在设计高精度底漂移集成运放时

除考虑输入级温漂外

还应考虑第二级温漂的影响。据此研制成功了高精度低漂移集成运放KD207

其开环电压增益A

可达130dB以上;GMRR在120dB左右;输入失调电压温漂优值可达0.5μV/°C以下。

Abstract

The calculations of the offset voltage drift of integrated circuit operational amplifier using super-* transistor as the input stage are made. In addition to the offset voltage drift of the first stage

the drift contributions of the second stage should also be taken into consideration when designing the high precision low drift IC operational amplifer. Based on this recognition

KD207 is developed.The circuit achieves open loop voltage gains of over 130 dB

common mode rejection ratio of about 120 dB

and offset voltage drift of less than 0.5uuuV/CCC （optimum）.

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