A Study of the Formation of Swirl Defects in P-type CZ Si Crystal

Sheng Zhen-ming; Qin Fu; Wan Qun

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A Study of the Formation of Swirl Defects in P-type CZ Si Crystal

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- A Study of the Formation of Swirl Defects in P-type CZ Si Crystal
- Acta Electronica Sinica Issue 1, Pages: 79-83(1983)
- 作者机构：
  
  冶金工业部有色金属研究总院
- 作者简介：
- 基金信息：
- DOI：
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- Published：1983
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[1]盛振鸣,秦福,万群.关于P型直拉硅单晶中旋涡形成的探讨[J].电子学报,1983(01):79-83.

Sheng Zhen-ming, Qin Fu, Wan Qun. A Study of the Formation of Swirl Defects in P-type CZ Si Crystal[J]. Acta Electronica Sinica, 1983, (1): 79-83.
[1]盛振鸣,秦福,万群.关于P型直拉硅单晶中旋涡形成的探讨[J].电子学报,1983(01):79-83. DOI：

Sheng Zhen-ming, Qin Fu, Wan Qun. A Study of the Formation of Swirl Defects in P-type CZ Si Crystal[J]. Acta Electronica Sinica, 1983, (1): 79-83. DOI：

摘要

研究了P型

100

、

111

直拉Si单晶中旋涡缺陷形成的因素。发现晶体的冷却速度对旋涡缺陷的形成起了决定性作用。氧浓度在0.5～1.7×10

-3

、碳浓度在0.2～1.9×10

-3

范围内

对旋涡缺陷的形成无明显影响。在偏心8mm下拉制的晶体中

虽然回熔严重

但采用适宜的冷却速度

仍能拉出无旋涡单晶。

Abstract

The factors which may have influence upon the formation of swirl defects in P-type <100>

<111> CZ Si crystal were studied. It was found that the cooling rate of the grown crystals is critical for the formation of swirl defects. The oxygen content in the range of 0.5-1.7×10（18）/cm3

and the carbon content in the range of 0.2-1.9×10（17）cm3 have no obvious effect on the formation of swirl defects. Though serious remelt had been observed when the distance between crystal axis and crucible axis became 8mm

yet it is still possible to obtain swirlfree crystals by adopting proper cooling rate.

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