In this paper

a current sensistivity function is defined to describe the sensisti-vity of the sense amplifier of single transistor cell MOS RAM. It gives a more detailed and vivid description of the transient process when the sense amplifier is reaching latch state. By using computer simulation techniques

it is possible to change the various design factors （such as the device parameters

precharged voltage on the bit line

raising waveform of φs

etc.） to observe their effects on the characterization of the sensistivity function S （t）. It is used as the basis for the optimal design

and the parameters can be obtained visually. Some suggestions of improving the sense amplifier design are made.