CW CO<sub>2</sub> Laser Alloying of Au-Ge-Ni Ohmic Contacts on n-GaAs

Zou Shi-chang; Wang Wei-yuan; Lin Cheng-lu; Xia Guan-qun

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CW CO₂ Laser Alloying of Au-Ge-Ni Ohmic Contacts on n-GaAs

更新时间：2025-12-08

- CW CO₂ Laser Alloying of Au-Ge-Ni Ohmic Contacts on n-GaAs
- Acta Electronica Sinica Issue 1, Pages: 104-106(1983)
- 作者机构：
  
  中国科学院上海冶金所
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- Published：1983
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[1]邹世昌,王渭源,林成鲁,夏冠群.用连续CO_2激光合金化制备Au-Ge-Ni-n GaAs欧姆接触[J].电子学报,1983(01):104-106.

Zou Shi-chang, Wang Wei-yuan, Lin Cheng-lu, et al. CW CO₂ Laser Alloying of Au-Ge-Ni Ohmic Contacts on n-GaAs[J]. Acta Electronica Sinica, 1983, (1): 104-106.
[1]邹世昌,王渭源,林成鲁,夏冠群.用连续CO_2激光合金化制备Au-Ge-Ni-n GaAs欧姆接触[J].电子学报,1983(01):104-106. DOI：

Zou Shi-chang, Wang Wei-yuan, Lin Cheng-lu, et al. CW CO₂ Laser Alloying of Au-Ge-Ni Ohmic Contacts on n-GaAs[J]. Acta Electronica Sinica, 1983, (1): 104-106. DOI：

摘要

本文利用CW CO

激光对GaAs的穿透性从GaAs晶片背面进行辐照

形成了良好的Au-Ge-Ni-n GaAs欧姆接触。研究了激光合金化对不同摻杂浓度GaAs的欧姆接触

并与热合金化作了对比试验。结果表明

激光合金化有较低的比接触电阻

材料的载流子浓度越低

比接触电阻降低得越显著。AES分析表明

激光合金化造成了一个优良的以Ge取代Ga的重掺杂的n型GaAs层。

Abstract

Backside irradiation through the substrate with a CW CO2 laser has been used to produce Au-Ge-Ni ohmic contacts on n-GaAs with different doping concentrations（6×10（14）-7×10（17）cm-3）.The laser alloyed contacts show better ohmic behavior and a contact resistance lower than that of furnace alloyed contacts by approximately an order of magnitude for low bulk concentrations（5×10（18）cm-3）.The formation of a Ge-enri-ched n-type GaAs layer after laser alloying

as shown by the results of AES analysis

is helpful to improve the interface properties of the contacts.

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CW CO2 Laser Alloying of Au-Ge-Ni Ohmic Contacts on n-GaAs

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CW CO₂ Laser Alloying of Au-Ge-Ni Ohmic Contacts on n-GaAs