CW Ar

+

laser is used for recrystallization of LPCVD polysilicon films on SiO

2

isolating layers. Experimental results show a significant increase in grain size from 200～500 to about 10μm and improvement in electrical properties. Enhancement-mode n-channel MOSFET is fabricated on laser recrystallized polysilicon films. For gate length of 12μm and gate width of 250μm

the transconductance g

m

threshold voltage V

T

and field effect mobility μn are 580μS

0.46V and 301 cm

2

/V·s respectively with source-drain leakage current per unit width I

DW

of 4.2×10

-12

A/μm. Grain growth as a result of laser induced melting and resolidification process is responsible for carrier mobility improvement

which is mainly determined by the barrier height and the scattering effect of the defects at grain boundaries.