Effects of Mean Free Path in LPCVD System and Calculation of It’s Process Conditions

Ding Cheng-yu

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Effects of Mean Free Path in LPCVD System and Calculation of It’s Process Conditions

更新时间：2025-12-08

- Effects of Mean Free Path in LPCVD System and Calculation of It’s Process Conditions
- Acta Electronica Sinica Issue 6, Pages: 82-86(1981)
- 作者机构：
  
  威海无线电一厂
- 作者简介：
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- DOI：
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- Published：1981
- 稿件说明：
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[1]丁成玉.LPCVD系统平均自由程影响及其工艺条件的计算[J].电子学报,1981(06):82-86.

Ding Cheng-yu. Effects of Mean Free Path in LPCVD System and Calculation of It’s Process Conditions[J]. Acta Electronica Sinica, 1981, (6): 82-86.
[1]丁成玉.LPCVD系统平均自由程影响及其工艺条件的计算[J].电子学报,1981(06):82-86. DOI：

Ding Cheng-yu. Effects of Mean Free Path in LPCVD System and Calculation of It’s Process Conditions[J]. Acta Electronica Sinica, 1981, (6): 82-86. DOI：

摘要

本文在A.Grove理论基础上

引入“平均自由程”概念

对低压化学汽相淀积（IPCVD）反应动力学作了分析

导出了该系统生长速度公式

并从理论上计算了反应的最佳条件。实验结果与理论分析符合得较好。

Abstract

Based on Grove’s theory

we introduced the concept of mean free path

studied the Kinetics of LPCVD techonlogy

calculated its process conditions and developed the formula of deposition rate as below:where: j-No. j wafer position; Ea-energy of activation; k-Boltzmann’s constant; T-absolute temperature; N（j）-consumption rate of ’silane to No.j; P-pressure; Y0-original concentration of silane.Using this formula

we have calculated silane concentration

temperature profile and optimum pressure in silane decomposition of LPCVD system. The results thus obtained are in good agreement with those of the experiments.

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