Study on the Property of Implanted Silicon Wafer after CW CO<sub>2</sub> Laser Annealing

Wu Jian-gen; Shen Jin-xuan; Qu Feng-yuan; Yong Heng-qing; Zhao You-yuan; Gao Ru-fang

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Study on the Property of Implanted Silicon Wafer after CW CO₂ Laser Annealing

更新时间：2025-12-08

- Study on the Property of Implanted Silicon Wafer after CW CO₂ Laser Annealing
- Acta Electronica Sinica Issue 2, Pages: 106-109(1983)
- 作者机构：
  
  复旦大学物理系
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- Published：1983
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[1]邬建根,沈金萱,屈逢源,杨恒青,赵有源,高如芳.CW CO_2激光退火后离子注入硅片的性质研究[J].电子学报,1983(02):106-109.

Wu Jian-gen, Shen Jin-xuan, Qu Feng-yuan, et al. Study on the Property of Implanted Silicon Wafer after CW CO₂ Laser Annealing[J]. Acta Electronica Sinica, 1983, (2): 106-109.
[1]邬建根,沈金萱,屈逢源,杨恒青,赵有源,高如芳.CW CO_2激光退火后离子注入硅片的性质研究[J].电子学报,1983(02):106-109. DOI：

Wu Jian-gen, Shen Jin-xuan, Qu Feng-yuan, et al. Study on the Property of Implanted Silicon Wafer after CW CO₂ Laser Annealing[J]. Acta Electronica Sinica, 1983, (2): 106-109. DOI：

摘要

当激光功率、束斑直径和硅片预热温度一定时

存在一临界扫描速度。当激光扫描速度小于此临界位时

CW CO

激光退火具有和热退火相同的载流子浓度、方块电阻、折射率、消光系数和反射率

但激光退火后少子扩散长度要比热退火的大几倍。

Abstract

The implanted silicon wafer is annealed by the scanning CW CO2 laser. The square resistance. Hall coefficient

elliptic’ally polarized parameters and diffusion length of minority carriers are measured after laser annealing. There is a critical scanning speed for given laser power

diameter of beam and preheated temperature of wafer. Blow the scanning speed

the electrical and optical parameter are as same as that after furnace annealing

but the diffusion length of substrate is several times as long as that after furnace annealing.

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Study on the Property of Implanted Silicon Wafer after CW CO2 Laser Annealing

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Study on the Property of Implanted Silicon Wafer after CW CO₂ Laser Annealing